메뉴 건너뛰기




Volumn 89, Issue 19, 2006, Pages

Temperature dependence of the gain in p -doped and intrinsic 1.3 μm InAsGaAs quantum dot lasers

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; DOPING (ADDITIVES); SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

EID: 33750925228     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2387114     Document Type: Article
Times cited : (34)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.