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Volumn 89, Issue 19, 2006, Pages
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Temperature dependence of the gain in p -doped and intrinsic 1.3 μm InAsGaAs quantum dot lasers
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CURRENT DENSITY;
DOPING (ADDITIVES);
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM DOTS;
GAIN SATURATION;
NONTHERMAL CARRIER DISTRIBUTION;
QUANTUM DOT LASERS;
TEMPERATURE DEPENDENCE;
SEMICONDUCTOR LASERS;
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EID: 33750925228
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2387114 Document Type: Article |
Times cited : (34)
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References (11)
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