Electrical and optical switching properties of ion implanted VO2 thin films

Thin Solid Films

Volumn 518, Issue 1, 2009, Pages 265-268

  Heckman, Emily M ^a,b   Gonzalez, Leonel P ^a,b   Guha, Shekhar ^a   Barnes, Jacob O ^a,b   Carpenter, Amelia ^a,b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b GENERAL DYNAMICS INFORMATION TECHNOLOGY   (United States)

Author keywords

Electrical properties and measurements; Optical properties; Raman scattering; Vanadium dioxide

Indexed keywords

CRYSTALLINE STRUCTURE; ELECTRICAL PROPERTIES AND MEASUREMENTS; INSULATING STATE; ION IMPLANTED; METAL INSULATOR TRANSITION TEMPERATURE; MIDWAVE INFRARED; OPTICAL SWITCHING; OPTICAL TRANSMISSIONS; RAMAN SPECTRA; TRANSITION TEMPERATURE; VANADIUM DIOXIDE; VANADIUM DIOXIDE THIN FILMS;

ELECTRIC PROPERTIES; INFRARED SPECTROSCOPY; INSULATION; ION BOMBARDMENT; ION IMPLANTATION; LIGHT TRANSMISSION; METAL INSULATOR BOUNDARIES; OPTICAL PROPERTIES; ORGANIC LIGHT EMITTING DIODES (OLED); RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR INSULATOR BOUNDARIES; SUPERCONDUCTING TRANSITION TEMPERATURE; THIN FILMS; VANADIUM; VANADIUM ALLOYS;

METAL INSULATOR TRANSITION;

EID: 69549103172     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.05.063     Document Type: Article

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