Reliability study of AlGaN/GaN HEMTs device

2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Volumn , Issue , 2007, Pages 87-89

  Matsushita, K ^a   Teramoto, S ^a   Sakurai, H ^a   Takada, Y ^a   Shim, J ^a   Kawasaki, H ^a   Tsuda, K ^a   Takagi, K ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

AlGaN; GaN; HEMT; Reliability

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; CURRENT DEGRADATION; FABRICATED DEVICE; GAN; ISOLATION STRUCTURES; POWER DENSITIES;

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTOR DEVICE MANUFACTURE;

RELIABILITY;

EID: 69249243550     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. T. Kikkawa, et.al., "An over 200-W output power GaN HEMT pushpull amplifier with high reliability", IEEE Int. Microwave Symp., pp.1347-1350 (2004).
2. Y. Okamoto, et.al., "Improved power Performance for a Recessed-Gate AlGaN/GaN Heterojunction FET With a Field-Modulating Plate", IEEE Trans. Microwave Theory and techniques, 52, 2536, (2004).
3. Y. Okamoto, et.al., "C-Band Single-Chip GaN-FET Power Amplifiers with 60-W Output Power", 2005 IEEE MTT-S Int. Microwave Symp., paper WE1E-3.
4. Y. Kamo, et.al., "A C-Band AlGaN/GaN HEMT with Cat -CVD SiN Passivation Developed for an over 100W Operation", 2005 IEEE MTTS Int. Microwave Symp., paper WE1E-4.
5. Y. Takada, et.al., "C-band AlGaN/GaN HEMTs with 170W Output Power", 2005 SSDM Int. Conf. I-6-5L.
6. K. Takagi et.al., "X-band AlGaN/GaN HEMT with over 80W Output Power", 2006 CSIC Symp, N-5.
7. S. Singhal et. al., "Reliability of large periphery GaN-on-Si HFETs" Microelectron. Reliability 46 (2006) 1247.
8. R.J. Trew, et. al., "The Physics of Reliability for High Voltage AlGaN/GaN HFET's", 2006 CSIC Symp., F-1.
9. M.A. Karn, et. al., "Current/voltage characteristic collapse in AIGaN/GaN heterostructure insulated gate field effect transistors at high drain bias" Electronics Lett. 30. 2175(1994).
10. G. Meneghessoa, et. al., "Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms induced by hot carrier testing" J. Appl. Phys. 82 (11), 15547(1997).
11. L. Zhang et. al., "Epitaxially-Grown GaN Junction Field Effect Transistors" IEEE Trans. ED47 3 507 (2009).