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Volumn 84, Issue 1, 2009, Pages 170-173
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Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD
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Author keywords
C V measurements; CET; High Dielectrics; SIMS; Thermal treatment
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Indexed keywords
ANNEALING CONDITION;
C-V CHARACTERISTIC;
C-V MEASUREMENTS;
CAPACITANCE VOLTAGE MEASUREMENTS;
CET;
CHEMICAL VAPOUR DEPOSITION;
INTERFACIAL LAYER;
LIQUID INJECTIONS;
LIQUID-INJECTION MOCVD;
METAL-ORGANIC;
MOCVD;
POSITIVE VOLTAGE;
SIMS;
THERMAL STABILITY;
THERMAL TREATMENT;
THIN DIELECTRIC FILM;
CHEMICAL VAPOR DEPOSITION;
DIELECTRIC FILMS;
ELECTRIC POTENTIAL;
HEAT TREATMENT;
LIQUIDS;
ORGANIC CHEMICALS;
SECONDARY ION MASS SPECTROMETRY;
SILICATES;
THERMODYNAMIC STABILITY;
FILM PREPARATION;
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EID: 69249213937
PISSN: 0042207X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.vacuum.2009.05.017 Document Type: Article |
Times cited : (12)
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References (12)
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