Structural properties of Y2O3 thin films grown on Si(1 0 0) and Si(1 1 1) substrates

Materials Science and Engineering: B

Volumn 116, Issue 1, 2005, Pages 30-33

  Spankova M ^a   Vavra I ^a   Chromik, S ^a   Harasek, S ^b   Luptak R ^a   Soltys J ^a   Husekova K ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b Österreichisches Patentamt   (Austria)

Author keywords

Electrical measurements; Oxides; Silicon; Sputtering; Thin films; Transmission electron microscopy

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; ELECTRIC VARIABLES MEASUREMENT; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; SILICON; SPUTTERING; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; PEROVSKITE OXIDE FILMS; SILICON SUBSTRATES;

YTTRIUM COMPOUNDS;

EID: 9644259179     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.09.004     Document Type: Article

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