Surface characterisation and interface studies of high-k materials by XPS and TOF-SIMS

Applied Surface Science

Volumn 252, Issue 1 SPEC. ISS., 2005, Pages 172-176

  Besmehn, A ^a   Scholl, A ^a   Rije, E ^a   Breuer, U ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

High k material; LaAlO 3; Metal oxide semiconductor; TOF SIMS; XPS

Indexed keywords

ADSORPTION; DEPOSITION; DIFFUSION; HEAT TREATMENT; INTERFACES (MATERIALS); MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRIC CHARACTERISTICS; INTERFACIAL LAYERS; RESIDUAL GAS;

DIELECTRIC MATERIALS;

EID: 24644504796     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.02.028     Document Type: Conference Paper

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6. R. Thomas, E. Rije, personal communication, 2004.