AFM surface analysis of ZnO layers prepared by pulsed laser deposition at different oxygen pressures

Vacuum

Volumn 84, Issue 1, 2009, Pages 166-169

  Haško, Daniel ^a   Bruncko, Jaroslav ^a  

^a INTERNATIONAL LASER CENTER   (Slovakia)

Author keywords

Pulsed laser deposition; Structural characterization; Zinc oxide thin films

Indexed keywords

AFM; DEPOSITION PRESSURES; EFFECT OF OXYGEN; GRAIN SIZE; LASER-PULSE ENERGY; LATERAL DIRECTIONS; MEAN SIZE; MEAN-GRAIN SIZE; OXYGEN PARTIAL PRESSURE; OXYGEN PRESSURE; PARTIAL OXYGEN PRESSURES; POLYCRYSTALLINE THIN FILM; PROCESSING PARAMETERS; PULSE REPETITION RATES; PULSED ND:YAG LASER; ROOT MEAN SQUARE; SILICON SUBSTRATES; STRUCTURAL CHARACTERIZATION; SUBSTRATE TEMPERATURE; ZINC OXIDE THIN FILMS; ZNO LAYERS;

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; FILM PREPARATION; GRAIN SIZE AND SHAPE; LASERS; MORPHOLOGY; OXIDE FILMS; OXYGEN; PARTIAL PRESSURE; PRESSURE EFFECTS; PULSED LASER DEPOSITION; STRUCTURAL ANALYSIS; SUBSTRATES; SURFACE ANALYSIS; SURFACE MORPHOLOGY; THIN FILMS; ZINC; ZINC OXIDE;

NEODYMIUM LASERS;

EID: 69249212205     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.05.009     Document Type: Article

References (21)

1. Look D.C. Mat Sci Eng B 80 (2001) 383
2. Pearton S.J., Norton D.P., Ip K., Heo Y.W., and Steiner T. Superlattice Microst 34 (2003) 3
3. Kim K.-S., and Kim H.W. Physica B 328 (2003) 368
4. Look D.C., and Claflin B. Phys Status Solidi B 241 (2004) 624
5. Ahuja R., Fast L., Wills J.M., Johansson B., and Eriksson O. J Appl Phys 83 (1998) 8065
6. Palmer DW. Semiconductor information's on. http://www.semiconductors.co.uk/
7. Lim J.H., Kang Ch.K., Kim K.K., Park I.K., Hwang D.K., and Park S.J. Adv Mater 18 (2006) 2720
8. Tobin G., McGlynn E., Henry M.O., Mosnier J.P., Lunney J.G., O'Mahony D., et al. Physica B 340-342 (2003) 245
9. Liang S., Sheng H., Liu Y., Huo Z., Lu Y., and Shen H. J Cryst Growth 225 (2001) 110
10. Lin T.K., Chang S.J., Su Y.K., Huang B.R., Fujita M., and Horikoshi Y. J Cryst Growth 281 (2005) 513
11. Nomura K., Ohta H., Takagi A., Kamiya T., Hirano M., and Hosono H. Nature 432 (2004) 488
12. Suliman A.E., Tang Y., and Xu L. Sol Energ Mat Sol C 91 (2007) 1658
13. Emanetoglu N.W., Gorla C., Liu Y., Liang S., and Lu Y. Mat Sci Semicon Proc 2 (1999) 247
14. Kim H., Horwitz J.S., Kim W.H., Mäkinen A.J., Kafafi Z.H., and Chrisey D.B. Thin Solid Films 420-421 (2002) 107
15. Schuler L.P., Valanoor N., Miller P., Guy I., Reeves R.J., and Alkaisi M.M. J Electron Mater 36 (2007) 507
16. Wei X.Q., Zhang Z.G., Liu M., Chen C.S., Sun G., Xue C.S., et al. Mater Chem Phys 101 (2007) 285
17. Kang H.S., Kang J.S., Pang S.S., Shim E.S., and Lee S.Y. Mat Sci Eng B 102 (2003) 313
18. Lim J., Shin K., Kim H., and Lee Ch. Thin Solid Films 475 (2005) 256
19. Paszkiewicz R., Paszkiewicz B., Wosko M., Szyszka A., Marciniak L., Prażmowska J., et al. J Cryst Growth 310 (2008) 4891
20. Kim H.W., and Kim N.H. Mat Sci Semicon Proc 7 (2004) 1
21. Klapetek P., Ohlídal I., Franta D., Montaigne-Ramil A., Bonanni A., Stifter D., et al. Acta Phys Slovaca 53 (2003) 223