Temperature-dependent characteristics of cylindrical gate-all-around twin silicon nanowire MOSFETs (TSNWFETs)

IEEE Electron Device Letters

Volumn 28, Issue 12, 2007, Pages 1129-1131

  Cho, Keun Hwi ^a   Suk, Sung Dae ^a   Yeoh, Yun Young ^a   Li, Ming ^a   Yeo, Kyoung Hwan ^a   Kim, Dong Won ^a   Park, Donggun ^a   Lee, Won Seong ^a   Jung, Young Chai ^b   Hong, Byung Hak ^b   Hwang, Sung Woo ^b  

^a SAMSUNG Electronics   (South Korea)

^b Korea University   (South Korea)

Author keywords

Gate all around (GAA); Nanostructured materials; Nanowire; Temperature

Indexed keywords

NANOWIRES; PHONON SCATTERING; SURFACE ROUGHNESS; TEMPERATURE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

GATE-ALL-AROUND (GAA); OFF-CURRENT; THERMAL GENERATION;

MOSFET DEVICES;

EID: 36549047930     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.909868     Document Type: Article

References (11)

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