Accurate SIMS doping profiling of aluminum-doped solid-phase epitaxy silicon islands

Electrochemical and Solid-State Letters

Volumn 11, Issue 4, 2008, Pages

  Civale, Yann ^a   Nanver, Lis K ^a   Alberici, Stefano G ^b   Gammon, Andrew ^b   Kelly, Ian ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b BRUNEL UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CONCENTRATION (PROCESS); DOPING (ADDITIVES); EPITAXIAL GROWTH; GEOMETRY; SECONDARY ION MASS SPECTROMETRY;

ELECTRICAL ACTIVATION; ISLAND GEOMETRY; SILICON ISLANDS; SOLID-PHASE EPITAXY;

SILICON;

EID: 39349115124     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2836739     Document Type: Article

References (18)

1. D. He, J. Y. Wang, and E. J. Mittemeijer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1871352, 97, 1 (2005).
2. J. Y. Wang, D. He, Y. H. Zhao, and E. J. Mittemeijer, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2172707, 88, 061910 (2006).
3. Y. Wang, V. Schmidt, S. Senz, and U. Gösele, Nat. Nanotechnol. NNAABX 1748-3387 10.1038/nnano.2006.133, 1, 186 (2006).
4. N. -K. Song, M. -S. Kim, Y. -J. Pyo, and S. -K. Joo, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2006.883559, 27, 899 (2006).
5. M. Zou, L. Cai, H. Wang, and J. Xu, Electrochem. Solid-State Lett. ESLEF6 1099-0062 10.1149/1.2139979, 9, G31 (2006).
6. C. -J. Su, H. -C. Lin, and T. -Y. Huang, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2006.877708, 27, 582 (2006).
7. V. Varadarajan, Y. Yasuda, S. Balasubramanian, and T. -J. King Liu, in IEDM Technical Digest, p. 149 (2006).
8. Y. Civale, L. K. Nanver, P. Hadley, E. J. G. Goudena, and H. Schellevis, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2006.873755, 27, 341 (2006).
9. O. Nast and S. R. Wenham, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.373632, 88, 124 (2000).
10. V. Varadarajan, Ph.D. Thesis, University of California Berkeley, CA (2007).
11. T. Izumida, K. Okano, T. Kanemura, M. Kondo, S. Itoh, N. Aoki, H. Kawasaki, A. Kaneko, A. Yagishita, S. Inaba, K. Ishimaru, M. Nakamura, K. Eguchi, K. Suguro, and H. Ishiuchi, in IEEE 2006 Silicon Nanoelectronics Workshop Proceedings, Honolulu, HI, p. 127 (2006).
12. S. M. Hogg, P. Kluth, St. Lenk, M. Zhang, St. Trellenkamp, J. Moers, and S. Mantl, in Proceedings of the 14th International Conference on Ion Implantation Technology, p. 682 (2002).
13. Y. Civale, L. K. Nanver, and H. Schellevis, IEEE Trans. Nanotechnol. ZZZZZZ 1536-125X, 6, 196 (2007).
14. Y. Civale, L. K. Nanver, P. Hadley, H. W. van Zeijl, E. J. G. Goudena, and H. Schellevis, Paper 0940-P05-04 presented at The Material Research Society Spring Meeting, San Francisco, CA (2006).
15. R. G. Wilson, F. A. Stevie, and C. W. Magee, Secondary Ion Mass Spectrometry, A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, p. 3.1-1, John Wiley & Sons, New York (1989).
16. Y. Civale, L. K. Nanver, and H. Schellevis, in Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment, F. Roozeboom, E. Gusev, H. Iwai, D. Kwong, M. Özturk, and, P. Timans, Editors, p. 97, The Electrochemical Society Proceedings Series, Pennington, NJ (2006).
17. F. A. Trumbore, Bell Syst. Tech. J., 39, 205 (1960).
18. L. K. Nanver, E. J. G. Goudena, and J. Slabbekoorn, in Proceedings of the International Conference on Microelectronic Test Structures, p. 241 (1996).