Sub-500 °C solid-phase epitaxy of ultra-abrupt p+-silicon elevated contacts and diodes

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 341-343

  Civale, Yann ^a   Nanver, Lis K ^a   Hadley, Peter ^b   Goudena, Egbert J G ^a   Schellevis, Hugo ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Al doping; Elevated contacts; Low ohmic contacts; Low temperature processing; p n p bipolar junction transistors; Solid phase epitaxy; Ultra shallow junctions

Indexed keywords

AMORPHOUS SILICON; BIPOLAR TRANSISTORS; OHMIC CONTACTS; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

CONTACT RESISTIVITY; ELEVATED CONTACTS; SOLID-PHASE EPITAXY; ULTRA-SHALLOW JUNCTIONS;

EPITAXIAL GROWTH;

EID: 33646258976     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.873755     Document Type: Article

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