Selective solid-phase silicon epitaxy of p+ aluminum-doped contacts for nanoscale devices

IEEE Transactions on Nanotechnology

Volumn 6, Issue 2, 2007, Pages 196-200

  Civale, Yann ^b   Nanver, Lis K ^a,b   Schellevis, Hugo ^b  

^a IEEE

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Al doping; Elevated source drain; Low ohmic contacts; Low temperature processing; Metal induced crystallization; p n p bipolar junction transistors; Selective epitaxial growth; Solid phase epitaxy; Ultrashallow junctions

Indexed keywords

CAPACITANCE; CRYSTALLIZATION; DOPING (ADDITIVES); INTERFACES (MATERIALS); OHMIC CONTACTS; TRANSMISSION ELECTRON MICROSCOPY;

AL-DOPING; ELEVATED SOURCE/DRAIN; LOW TEMPERATURE PROCESSING; LOW-OHMIC CONTACTS; METAL INDUCED CRYSTALLIZATION; P-N-P BIPOLAR JUNCTION TRANSISTORS; SELECTIVE EPITAXIAL GROWTH; SOLID PHASE EPITAXY; ULTRASHALLOW JUNCTIONS;

ALUMINUM ALLOYS;

EID: 33947245652     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.891826     Document Type: Article

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