Influence of N interstitials on the electronic properties of GaAsN alloys

Applied Physics Letters

Volumn 95, Issue 6, 2009, Pages

  Jin, Y ^a   Jock, R M ^a   Cheng, H ^a   He, Y ^b   Mintarov, A M ^b   Wang, Y ^c   Kurdak, C ^a   Merz, J L ^b   Goldman, R S ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b University of Notre Dame   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND EDGE; INTERSTITIALS; NUCLEAR REACTION ANALYSIS; RAMAN SPECTRA; THERMALLY ACTIVATED; COMPLEX FORMATIONS; CONCENTRATION OF; HETEROSTRUCTURES; INTERSTITIAL PAIRS; MODULATION-DOPED; SI FILMS;

ACTIVATION ENERGY; CERIUM ALLOYS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; NUCLEAR REACTORS; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; WEAR RESISTANCE; CARRIER CONCENTRATION; SILICON; TELLURIUM COMPOUNDS;

CARRIER CONCENTRATION; SILICON ALLOYS;

EID: 69049106537     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3187915     Document Type: Article

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