Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si

Chinese Physics B

Volumn 18, Issue 7, 2009, Pages 2988-2991

  Gui Feng, Chen ^a   Wen Bo, Yan ^a   Hong Jian, Chen ^a   Hui Ying, Cui ^a   Yang Xian, Li ^a  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Annealing processes; Cz Si; Defect complex; Electron irradiation

Indexed keywords

ANNEALING PROCESSES; ANNEALING TEMPERATURES; CONCENTRATION OF; CZ-SI; DEFECT COMPLEX; SILICON CRYSTAL;

ANNEALING; CONCENTRATION (PROCESS); ELECTRONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXYGEN; SILICON;

ELECTRON IRRADIATION;

EID: 68949176626     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/7/061     Document Type: Article

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