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Volumn 25, Issue 6 SUPPL. 2, 2006, Pages 55-58

Infrared studies of vacancy-oxygen-related complexes in electron-irradiated Czochralski-silicon

Author keywords

electron irradiation; FTIR; irradiation defect; VO

Indexed keywords

COMPLEXATION; DEFECTS; ELECTRON IRRADIATION; FOURIER TRANSFORMS; OXYGEN;

EID: 42949104991     PISSN: 10010521     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1001-0521(08)60052-2     Document Type: Article
Times cited : (2)

References (10)
  • 1
    • 0036135055 scopus 로고    scopus 로고
    • Defect engineering in Czochralski silicon by electron irradiation at different temperatures
    • Lindstrom J.L., and Murin L.I. Defect engineering in Czochralski silicon by electron irradiation at different temperatures. Nuclear Instruments and Methods in Physics Research B 186 (2002) 123
    • (2002) Nuclear Instruments and Methods in Physics Research B , vol.186 , pp. 123
    • Lindstrom, J.L.1    Murin, L.I.2
  • 4
    • 17044459643 scopus 로고    scopus 로고
    • Interaction between self-interstitials and the oxygen dimer in silicon
    • Lindstrom J.L., Hallberg T., and Hennansson J. Interaction between self-interstitials and the oxygen dimer in silicon. Physica B 308-310 (2001) 284
    • (2001) Physica B , vol.308-310 , pp. 284
    • Lindstrom, J.L.1    Hallberg, T.2    Hennansson, J.3
  • 5
    • 0346055275 scopus 로고    scopus 로고
    • Electron-dose dependence of concentrations of vacancy-oxygen pairs and divacancies in electron-irradiated n-type Si crystals
    • Suezawa M. Electron-dose dependence of concentrations of vacancy-oxygen pairs and divacancies in electron-irradiated n-type Si crystals. Physica B 340-342 (2003) 590
    • (2003) Physica B , vol.340-342 , pp. 590
    • Suezawa, M.1
  • 7
    • 19844375158 scopus 로고    scopus 로고
    • Infrared absorption spectrum studies of the VO defect in fast neutron irradiated Czochralski silicon
    • Yang S., and Li Y.X. Infrared absorption spectrum studies of the VO defect in fast neutron irradiated Czochralski silicon. Journal of Crystal Growth 280 (2005) 62
    • (2005) Journal of Crystal Growth , vol.280 , pp. 62
    • Yang, S.1    Li, Y.X.2
  • 10
    • 33750363766 scopus 로고
    • New oxygen infrared bands in annealed irradiated silicon
    • Corbett J.W., Watkins G.D., and McDonald R.S. New oxygen infrared bands in annealed irradiated silicon. Phys. Rev. B 135 (1964) A138
    • (1964) Phys. Rev. B , vol.135
    • Corbett, J.W.1    Watkins, G.D.2    McDonald, R.S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.