Electron-dose dependence of concentrations of vacancy-oxygen pairs and divacancies in electron-irradiated n-type Si crystals

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 587-591

  Suezawa, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Divacancy; Oxygen; Phosphorus; Silicon; Vacancy oxygen pair

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CHEMICAL POLISHING; CONCENTRATION (PROCESS); CRYSTAL GROWTH FROM MELT; CRYSTALS; ELECTRON IRRADIATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED SPECTROMETERS; LIGHT ABSORPTION; NUMERICAL METHODS; PHOSPHORUS; POINT DEFECTS; PRECIPITATION (CHEMICAL); SATURATION (MATERIALS COMPOSITION); THERMAL EFFECTS;

ROOM TEMPERATURE; THERMAL DONORS; VACANCY-OXYGEN PAIR;

SILICON;

EID: 0346055275     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.129     Document Type: Conference Paper

References (6)

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5. A. Nakanishi, et al. Jpn. J. Appl. Phys. 42 (2003), in press.
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