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Volumn 13, Issue 5-6, 2007, Pages 465-474

Parameter optimization for an ICP deep silicon etching system

Author keywords

[No Author keywords available]

Indexed keywords

MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; OPTIMIZATION; PARAMETER ESTIMATION; PRESSURE EFFECTS;

EID: 33847261978     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-006-0211-2     Document Type: Article
Times cited : (24)

References (9)
  • 2
    • 2342464265 scopus 로고    scopus 로고
    • Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system
    • Chung CK (2004) Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system. J Micromech Microeng 14:656-662
    • (2004) J Micromech Microeng , vol.14 , pp. 656-662
    • Chung, C.K.1
  • 5
    • 0003950677 scopus 로고
    • Method of anisotropically etching silicon
    • German Patent DE4241045C1 and US Patent 5501893
    • Laermer F, Schilp A (1994) Method of anisotropically etching silicon. German Patent DE4241045C1 and US Patent 5501893
    • (1994)
    • Laermer, F.1    Schilp, A.2
  • 6
    • 0742286282 scopus 로고    scopus 로고
    • Sidewall roughness control in advanced silicon etch process
    • Liu HC, Lin YH, Hsu W (2003) Sidewall roughness control in advanced silicon etch process. Microsyst Technol 10:29-34
    • (2003) Microsyst Technol , vol.10 , pp. 29-34
    • Liu, H.C.1    Lin, Y.H.2    Hsu, W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.