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Volumn 6109, Issue , 2006, Pages

Development of fabrication techniques for high-density integrated MIM capacitors in power conversion equipment

Author keywords

DRIE; High aspect ratio trenches; High capacitance density; Integrated capacitor; MIM

Indexed keywords

CAPACITORS; ELECTRIC RESISTANCE; MICROELECTROMECHANICAL DEVICES; POLYSILICON; POWER CONVERTERS; POWER ELECTRONICS; REACTIVE ION ETCHING;

EID: 33646023709     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.646121     Document Type: Conference Paper
Times cited : (8)

References (17)
  • 8
    • 33646062238 scopus 로고    scopus 로고
    • "Method of anisotropically etching silicon", US Patent 5,501,893, March
    • Laermert and P. Schilp, "Method of anisotropically etching silicon", US Patent 5,501,893, March 1996.
    • (1996)
    • Laermert1    Schilp, P.2
  • 9
    • 84904463919 scopus 로고    scopus 로고
    • Critical aspect ratio dependence in deep reactive ion etching of silicon
    • Boston
    • J. Yeom, Y. Wu, M. A. Shannon, "Critical aspect ratio dependence in deep reactive ion etching of silicon", Transducers '03, Boston, 2. pp. 1631-1634, 2003.
    • (2003) Transducers '03 , vol.2 , pp. 1631-1634
    • Yeom, J.1    Wu, Y.2    Shannon, M.A.3
  • 10
    • 33645340155 scopus 로고    scopus 로고
    • Pattern shape effects and artefacts in deep silicon etching
    • J. Kiihamäki and S. Franssila. "Pattern shape effects and artefacts in deep silicon etching", Journal of Vacuum Science and Technology, A 17(4), pp. 2280 - 2285, 1999.
    • (1999) Journal of Vacuum Science and Technology, A , vol.17 , Issue.4 , pp. 2280-2285
    • Kiihamäki, J.1    Franssila, S.2
  • 11
    • 2342464265 scopus 로고    scopus 로고
    • Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system
    • C-K Chung, "Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system", Journal of Micromechanical and Microengineering, 14, pp. 656-662, 2004.
    • (2004) Journal of Micromechanical and Microengineering , vol.14 , pp. 656-662
    • Chung, C.-K.1
  • 12
    • 2142769904 scopus 로고    scopus 로고
    • Characterization of the microloading effect in deep reactive ion etching of silicon
    • S. Jensen and Ole Hansen. "Characterization of the microloading effect in deep reactive ion etching of silicon, Proc. SPEE-Int. Soc. Opt. E,g. 5342, pp 111-118, 2004.
    • (2004) Proc. SPEE-int. Soc. Opt. E,g. , vol.5342 , pp. 111-118
    • Jensen, S.1    Hansen, O.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.