Rapid-relocation model for describing high-fluence retention of rare gases implanted in solids

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 17, 2009, Pages 2846-2857

  Wittmaack, K ^a  

^a INSTITUTE OF EPIDEMIOLOGY   (Germany)

Author keywords

Inert gas retention; Ion implantation; Radiation enhanced diffusion; Si; Xe

Indexed keywords

AREAL DENSITIES; CHARACTERISTIC ENERGY; COMPUTER SIMULATION MODEL; DAMAGE DISTRIBUTION; DE-TRAPPING; DEPTH RESOLUTION; ENERGY DEPENDENCE; ERROR MARGINS; FITTING PARAMETERS; FLUENCES; GAS ATOMS; IMPLANTATION ENERGIES; INERT GAS RETENTION; LATTICE DISPLACEMENT; LIMITING FACTORS; NORMAL INCIDENCE; ORDER OF MAGNITUDE; RADIATION ENHANCED DIFFUSION; RANGE DISTRIBUTION; RARE GAS; RARE GAS ATOMS; RE-EMISSION; RETENTION MODELS; RUTHERFORD BACKSCATTERING SPECTROMETRY; SHIFT PARAMETERS; SHIFT-AND; SI; SPUTTER EROSION; SPUTTERING YIELDS; SURFACE RECESSION; TARGET DENSITY; TRAPPED GAS; VOLUME EXPANSION; XE;

ARGON; ATOMS; COMPUTER SIMULATION LANGUAGES; DEFECT DENSITY; DIFFUSION; INERT GASES; ION BOMBARDMENT; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SPUTTERING; SURFACE DIFFUSION; SWELLING; XENON;

DENSITY OF GASES;

EID: 68949135574     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.06.097     Document Type: Article

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