Ion fluence dependence of the Si sputtering yield by noble gas ion bombardment

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 6, 2008, Pages 872-876

  Mutzke, A ^a   Eckstein, W ^a  

^a MAX PLANCK INSTITUT FÜR PLASMAPHYSIK   (Germany)

Author keywords

02.50.U; 02.60; 34.50; 79.20.R; 81.15.C; Applications of Monte Carlo method; Atom; Atoms scattering; Atoms sputtering; Film deposition; Ion impact; Molecule; Numerical methods

Indexed keywords

DIFFUSION; INERT GASES; ION BOMBARDMENT; MONTE CARLO METHODS; NUMERICAL METHODS; SPUTTERING;

ATOMS SCATTERING; ATOMS SPUTTERING; FILM DEPOSITION; ION IMPACT;

SILICON;

EID: 41549096306     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.01.053     Document Type: Article

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