Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes

Semiconductor Science and Technology

Volumn 24, Issue 9, 2009, Pages

  Wang, Ling ^a   Bao, Xichang ^a   Zhang, Wenjing ^a   Li, Chao ^a   Yuan, Yonggang ^a   Xu, Jintong ^a   Zhang, Yan ^a   Li, Xiangyang ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; BAND TO BAND TUNNELING; BREAKDOWN VOLTAGE; DIFFERENT STRUCTURE; I-LAYER; INTRINSIC LAYER; MULTIPLICATION FACTOR; NOISE CURRENT;

AVALANCHE PHOTODIODES; DARK CURRENTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; PHOTODIODES; SEMICONDUCTING GALLIUM; TUNNELING (EXCAVATION); WIND TUNNELS;

GALLIUM ALLOYS;

EID: 68949135480     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/9/095006     Document Type: Article

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