Monte Carlo investigation of current voltage and avalanche noise in GaN double-drift impact diodes

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Reklaitis, Antanas ^a   Reggiani, Lino ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOCORRELATION FUNCTION; CARRIER DRIFT VELOCITY; IONIZATION COEFFICIENTS; MICROWAVE EMITTERS;

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FEEDBACK; GALLIUM NITRIDE; IMPACT IONIZATION; MICROWAVE DEVICES; MONTE CARLO METHODS; PHOTODIODES; SPURIOUS SIGNAL NOISE;

AVALANCHE DIODES;

EID: 13744251393     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1853498     Document Type: Article

References (32)

1. H. Eisele and G. I. Haddad, IEEE Trans. Microwave Theory Tech. 46, 739 (1998).
2. C. Benz and J. Freyer, Electron. Lett. 34, 2351 (1998).
3. A. K. Panda, D. Pavlidis, and E. Alekseev, IEEE Trans. Electron Devices 48, 820 (2001).
4. A. Reklaitis and L. Reggiani, J. Appl. Phys. 95, 7925 (2004).
5. A. S. Tager, Sov. Phys. Solid State 6, 1919 (1965); [Fiz. Tverd. Tela (Leningrad) 6, 2418 (1964)].
6. A. S. Tager, Sov. Phys. Solid State 6, 1919 (1965); [Fiz. Tverd. Tela (Leningrad) 6, 2418 (1964)].
7. R. J. McIntyre, IEEE Trans. Electron Devices ED-13, 164 (1966).
8. A. Reklaitis and L. Reggiani, Phys. Rev. B 60, 11683 (1999).
9. R. J. McIntyre, IEEE Trans. Electron Devices ED-19, 703 (1972).
10. F. Capasso, W.-T. Tsang, and G. F. Williams, IEEE Trans. Electron Devices ED-30, 381 (1983).
11. H. M. Menkara, B. K. Wagner, and C. J. Summers, Appl. Phys. Lett. 66, 1764 (1995).
12. W. A. Lukaszek, A. van der Ziel, and E. R. Chenette, Solid-State Electron. 19, 57 (1976).
13. M. C. Teich, K. Matsuo, and B. E. A. Saleh, IEEE J. Quantum Electron. QE-22, 1184 (1986).
14. J. S. Marsland, J. Appl. Phys. 67, 1929 (1990).
15. N. Z. Hakim, B. E. A. Saleh, and M. C. Teich, IEEE Trans. Electron Devices ED-37, 599 (1990).
16. J. S. Marsland, R. C. Woods, and C. A. Brownhill, IEEE Trans. Electron Devices ED-39, 1129 (1992).
17. K. M. Van Vliet, A. Friedman, and L. M. Rucker, IEEE Trans. Electron Devices ED-26, 752 (1979).
18. B. E. A. Saleh, M. M. Hayat, and M. C. Teich, IEEE Trans. Electron Devices ED-37, 1976 (1990).
19. D. S. Ong, K. F. Li, G. J. Rees, J. P. R. David, P. N. Robson, and G. M. Dunn, Appl. Phys. Lett. 72, 232 (1998).
20. D. S. Ong, K. F. Li, G. J. Rees, J. P. R. David, and P. N. Robson, J. Appl. Phys. 83, 3426 (1998).
21. F. S. Barnes, W.-H. Su, and K. F. Brennan, IEEE Trans. Electron Devices ED-34, 966 (1987).
22. T. Kuhn, L. Reggiani, and L. Varani, Phys. Rev. B 42, 11133 (1990).
23. Shockley, J. Appl. Phys. 9, 635 (1938).
24. Ramo, Proc. IRE 27, 584 (1939).
25. Junevicius and A. Reklaitis, Electron. Lett. 24, 1307 (1988).
26. Lax, Rev. Mod. Phys. 32, 25 (1960).
27. T. Kuhn, L. Reggiani, L. Varani, and V. Mitin, Phys. Rev. B 42, 5702 (1990).
28. A. Reklaitis and L. Reggiani, Phys. Rev. B 62, 16773 (2000).
29. O. M. Bulashenko, J. Mateos, D. Pardo, T. Gonzalez, L. Reggiani, and J. M. Rubi, Phys. Rev. B 57, 1366 (1998).
30. E. O. Kane, J. Phys. Chem. Solids 12, 181 (1959).
31. A. Carbone, R. Introzzi, and H. C. Liu, Appl. Phys. Lett. 82, 4292 (2003).
32. A. van der Ziel; Noise (Prentice Hall, Englewood Cliffs, NJ, 1954).