Empirical tight-binding calculations of the electronic structure of dilute III-V-N semiconductor alloys

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 776-780

  Turcotte, S ^a   Shtinkov, N ^a   Desjardins, P ^a   Masut, R A ^a   Leonelli, R ^b  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BRILLOUIN SCATTERING; CALCULATIONS; ELECTRONIC STRUCTURE; HAMILTONIANS; HETEROJUNCTIONS; MATHEMATICAL MODELS; OPTOELECTRONIC DEVICES; PHOTOVOLTAIC CELLS; SEMICONDUCTOR LASERS;

SEMICONDUCTOR ALLOYS; TELECOMMUNICATION WAVELENGTHS; TEMPERATURE STABILITY; TIGHT-BINDING (TB) CALCULATIONS;

ALLOYS;

EID: 3142748479     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1688361     Document Type: Conference Paper

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