The electronic band structures of InNx As1 - x, InNx Sb1 - x and InAsx Sb1 - x alloys

Journal of Alloys and Compounds

Volumn 469, Issue 1-2, 2009, Pages 504-511

  Mohammad, Rezek ^a   Katircioǧlu, Şenay ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Band gap bowing parameter; Empirical tight binding method (ETB); InAsx Sb1 x; InNx As1 x; InNx Sb1 x; Ternary alloys

Indexed keywords

ARSENIC; BENDING (FORMING); BINDING ENERGY; CERIUM ALLOYS; ENERGY GAP; GALLIUM ALLOYS; INDIUM ARSENIDE; LATTICE CONSTANTS; METALLIC COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS; TERNARY ALLOYS; TERNARY SYSTEMS;

BAND GAP BOWING PARAMETER; EMPIRICAL TIGHT BINDING METHOD (ETB); INASX SB1 - X; INNX AS1 - X; INNX SB1 - X;

ALLOYS;

EID: 58249144579     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.02.016     Document Type: Article

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