MOVPE and characterization of InAsN/GaAs multiple quantum wells

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 544-547

  Kuboya, S ^a   Thieu, Q T ^a   Ono, W ^a   Nakajima, F ^a   Katayama, R ^a   Onabe, K ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. High resolution X ray diffraction; A1. Low dimensional structures; A1. Optical properties; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. III V nitrides

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILMS; X RAY DIFFRACTION;

ELECTRON CONCENTRATION; HIGH-RESOLUTION X-RAY DIFFRACTION; PHOTOLUMINESCENCE EXCITATION (PLE) PEAKS; RED SHIFT; STOKES SHIFT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33846445677     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.071     Document Type: Article

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