Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2663-2667

  Zhou, Yugang ^a   Chu, Rongming ^a   Liu, Jie ^a   Chen, Kevin J ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS;

GATE LEAKAGE; HIGH ELECTRON MOBILITY TRANSISTORS (HEMT); SURFACE DONOR DENSITY; THIN SURFACE BARRIER (TSB);

LEAKAGE CURRENTS;

EID: 27344446011     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461623     Document Type: Conference Paper

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