The effect of the intrinsic layer on the reliability of nitride-based p-i-n photodetectors

Semiconductor Science and Technology

Volumn 24, Issue 5, 2009, Pages

  Chiou, Y Z ^a  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; ELECTRICAL STRENGTH; ESD PROTECTION; ETCHED SIDEWALLS; GAN LAYERS; HIGHLY SENSITIVE; I-LAYER; INTRINSIC LAYER; P-I-N PHOTODETECTORS; WEAK POINTS;

GALLIUM ALLOYS; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM;

PHOTODETECTORS;

EID: 68849110672     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/5/055004     Document Type: Article

References (10)

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