The production and annealing stages of the self-interstitial (R2) defect in diamond

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 644-646

  Twitchen, D J ^a   Hunt, D C ^a   Wade, C ^a   Newton, M E ^a   Baker, J M ^a   Anthony, T R ^b   Banholzer, W F ^b  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b GENERAL ELECTRIC COMPANY   (United States)

Author keywords

Annealing; Irradiation damage; Self interstitial

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY;

SELF-INTERSTITIAL DEFECTS;

SEMICONDUCTING DIAMONDS;

EID: 0033322602     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00594-3     Document Type: Article

References (6)

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5. D.J. Twitchen, M.E. Newton, J.M. Baker, O.D. Tucker, T.R. Anthony, W.F. Banholzer, Phys. Rev. B 54 (1996) 6988.
6. D.J. Twitchen, D.C. Hunt, M.E. Newton, J.M. Baker, T.R. Anthony, W.F. Banholzer, Physica B (1999) submitted for publication.