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Journal of Crystal Growth

Volumn 235, Issue 1-4, 2002, Pages 111-114

Energy gap in GaN bulk single crystal between 293 and 1237 K

(7) Su, Ching Hua a Palosz, W b Zhu, Shen b Lehoczky, S L a Grzegory, I c Perlin, P c Suski, T c

a NASA MARSHALL SPACE FLIGHT CENTER (United States)

b UNIVERSITIES SPACE RESEARCH ASSOCIATION (United States)

c INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; HEAT TREATMENT; LIGHT ABSORPTION; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

SINGLE CRYSTAL PLATELETS;

SINGLE CRYSTALS;

EID: 0036467306 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01834-6 Document Type: Article

Times cited : (21)

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