Atomically flat interface in SiGe/Si heterostructures formed by solid phase epitaxy: significant increase in two-dimensional electron mobility

Microelectronic Engineering

Volumn 47, Issue 1, 1999, Pages 221-223

  Miyao, M ^a   Nakagawa, K ^a   Sugii, N ^a   Yamaguchi, S ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON GAS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON MOBILITY; SOLID PHASE EPITAXY;

HETEROJUNCTIONS;

EID: 0032594659     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00200-2     Document Type: Article

References (8)

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7. A.A. van Gorkum, K.Nakagawa and Y.Shiraki: J.Appl.Phys. 65, (1989), 2485
8. K. Yamaguchi and L. Geux: private communication