Three-dimensional thermal stresses in on-axis grown SiC crystals

Journal of Crystal Growth

Volumn 284, Issue 3-4, 2005, Pages 425-433

  Böttcher, Klaus ^a   Cliffe, K Andrew ^b  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b SERCO ASSURANCE   (United Kingdom)

Author keywords

A1. Computer simulation; A1. Stresses; A2. Growth from vapour

Indexed keywords

COMPUTER SIMULATION; FINITE ELEMENT METHOD; HEAT TRANSFER; PROBLEM SOLVING; STRESSES; THERMAL STRESS;

AXISYMMETRIC HEAT TRANSFER; GROWTH FROM VAPOR;

SINGLE CRYSTALS;

EID: 26044481679     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.07.030     Document Type: Article

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