Electronic and structural properties of the amorphous/crystalline silicon interface

Thin Solid Films

Volumn 517, Issue 23, 2009, Pages 6386-6391

  Kleider, J P ^a   Chouffot, R ^a   Gudovskikh, A S ^b   Roca i Cabarrocas, P ^c   Labrune, M ^c   Ribeyron, P J ^d   Bruggemann R ^e  

^a UNIV PARIS SUD   (France)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^c LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^d CEA GRENOBLE   (France)

^e UNIVERSITY OF OLDENBURG   (Germany)

Author keywords

Characterization; Heterojunctions; Interface; Silicon; Solar cells

Indexed keywords

A-SI:H; CONDUCTANCE MEASUREMENT; CONDUCTION BAND OFFSET; ELECTRICAL MEASUREMENT; ELECTRONIC AND STRUCTURAL PROPERTIES; EPITAXIALLY GROWN; INTERFACE; INTERFACE DEFECTS; INTERFACE QUALITY; OPEN-CIRCUIT VOLTAGES; POLYMORPHOUS SILICON; REVERSE BIAS; SI SURFACES; SILICON INTERFACE; STRONG INVERSION; UNDOPED SILICON;

CAPACITANCE; CAPACITANCE MEASUREMENT; ELECTRIC POTENTIAL; ELECTRON MOBILITY; HETEROJUNCTIONS; PHOTOVOLTAIC CELLS; SILICON COMPOUNDS; SOLAR CELLS; SPECTROSCOPIC ELLIPSOMETRY;

SILICON;

EID: 68449090845     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.092     Document Type: Article

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