Improvement of on/off ratio in ZnO thin-film transistor by using growth interruptions during metalorganic chemical vapor deposition

Thin Solid Films

Volumn 517, Issue 23, 2009, Pages 6337-6340

  Jo, Jungyol ^a   Choi, Hyoshik ^a   Yun, Junho ^a   Kim, Haemi ^a   Seo, Ogweon ^b   Lee, Byeonggon ^c  

^a Ajou University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c CDA Co Ltd   (South Korea)

Author keywords

Organometallic vapour deposition; Surface conductivity; Vacancies; Zinc oxide

Indexed keywords

COMPLETE OXIDATION; DATA SUPPORT; DIETHYLZINC; ENHANCEMENT-MODE; GROWTH INTERRUPTION; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; ON/OFF RATIO; POSITIVE VOLTAGE; SURFACE CONDUCTIVITY; SURFACE LAYERS; ZNO; ZNO FILMS;

DIELECTRIC PROPERTIES; ELECTRIC CONDUCTIVITY; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANOMETALLICS; OXYGEN; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; VACANCIES; VAPORS; ZINC;

ZINC OXIDE;

EID: 68449088237     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.083     Document Type: Article

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