Development of chemically assisted etching method for GaAs-based optoelectronic devices

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 2, 2005, Pages 256-264

  Gaillard, M ^a   Rhallabi, A ^b   Elmonser, L ^b   Talneau, A ^c   Pommereau, F ^d   Pagnod Rossiaux, Ph ^d   Bouadma, N ^e  

^a Veeco Process Equipment ZI de la Gaud e   (France)

^b UNIVERSITÉ DE NANTES   (France)

^c CNRS   (France)

^d OPTO+   (France)

^e ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; COMPUTER SIMULATION; GALLIUM COMPOUNDS; ION BEAMS; MORPHOLOGY; OPTOELECTRONIC DEVICES; STOICHIOMETRY;

ETCHING SYSTEMS; ION BEAM ETCHING;

ETCHING;

EID: 31144475094     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1851540     Document Type: Article

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