Two-dimensional waveguide based photonic microstructures in GaAs and InP

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 29-32

  Krauss, T F ^a   Smith, C J M ^a   Vogele B ^a   Murad, S K ^a   Wilkinson, C D W ^a   Grant, R S ^b   Burt, M G ^b   De La Rue, R M ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b MARTLESHAM HEATH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; ENERGY GAP; FABRICATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

PATTERN TRANSFER; PHOTONIC BANDGAP; PHOTONIC MICROSTRUCTURE;

CRYSTAL MICROSTRUCTURE;

EID: 0031074690     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00127-X     Document Type: Article

References (6)

1. E. Yablonovitch, "Inhibited spontaneous emission in solid-state physics and electronics", Phys.Rev.Lett., 58, (20), pp.2059-2062, 1987.
2. T. Krauss, Y.P. Song, S. Thoms, C.D.W. Wilkinson and R.M. DelaRue, "Fabrication of 2-D photonic bandgap structures in GaAs/AlGaAs", El.Lett., 30, pp.1444-1446, 1994.
3. 4 plasma and the capping layer thickness on gate recess etching of GaAs pseudomorphic High Electron Mobility Transistors". to be published in J. Vac. Sci. Tech. B., presented at the 40th EIPB 96, Atlanta, U.S.A., 1996.
4. S.E. Hicks, S.K. Murad, I. Sturrock and C.D.W. Wilkinson, "Improving the resistivity of PECVD silicon nitride to dry etching using an oxygen plasma", paper D1, MNE 1996.
5. T F. Krauss, R. M. De La Rue and S. Brand, "Two-dimensional photonic bandgap structures at 850 nm wavelength", accepted for publication in NATURE.
6. T.F. Krauss and R.M. De La Rue, "Photonic microstructures for the next generation of microcavity lasers", paper Th3.6, 15th IEEE Semiconductor Laser Conference, Haifa, Israel, October 1996.