The 1/f noise and random telegraph noise characteristics in floating-gate nand flash memories

IEEE Transactions on Electron Devices

Volumn 56, Issue 8, 2009, Pages 1624-1630

  Bae, Sung Ho ^a   Lee, Jeong Hyun ^a   Kwon, Hyuck In ^b   Ahn, Jung Ryul ^c   Om, Jae Chul ^c   Park, Chan Hyeong ^d   Lee, Jong Ho ^a  

^a Kyungpook National University   (South Korea)

^b Daegu University   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

^d Kwangwoon University   (South Korea)

Author keywords

1 f noise; Floating gate (FG); Low frequency noise (LFN); NAND Flash memory; Program erase (P E) cycling; Random telegraph noise (RTN); Threshold voltage fluctuation

Indexed keywords

1/F NOISE; FLOATING GATE (FG); LOW-FREQUENCY NOISE (LFN); NAND FLASH MEMORY; PROGRAM/ERASE (P/E) CYCLING; RANDOM TELEGRAPH NOISE (RTN); THRESHOLD VOLTAGE FLUCTUATION;

CELL MEMBRANES; NAND CIRCUITS; SEMICONDUCTOR STORAGE; TELEGRAPH; THERMAL NOISE; THRESHOLD VOLTAGE;

FLASH MEMORY;

EID: 68349150883     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2022700     Document Type: Article

References (16)

1. M. J. Kirton and M. J. Uren, "Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/f) noise," Adv. Phys., vol. 38, no. 4, pp. 367-468, 1989.
2. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, "Random telegraph noise of deep-submicrometer MOSFETs," IEEE Electron Device Lett., vol. 11, no. 2, pp. 90-92, Feb. 1990.
3. G. Ghibaudo and T. Boutchacha, "Electrical noise and RTS fluctuations in advanced CMOS devices," Microelectron. Reliab., vol. 42, no. 4, pp. 573-582, Apr. 2002.
4. H. Kurata, K. Otsuga, A. Kotabe, S. Kajiyama, T. Osabe, Y. Sasago, S. Narumi, K. Tokami, S. Kamohara, and O. Tsuchiya, "The impact of random telegraph signals on the scaling of multilevel Flash memories," in Proc. IEEE Symp. VLSI Circuit, 2006, pp. 112-113.
5. N. Tega, H. Miki, T. Osabe, A. Kotabe, K. Otsuga, H. Kurata, S. Kamohara, K. Tokami, Y. Ikeda, and R. Yamada, "Anomalously large threshold voltage fluctuation by complex random telegraph signal in floating gate Flash memory," in Proc. IEDM Tech. Dig., 2006, pp. 491-494.
6. H. Miki, T. Osabe, N. Tega, A. Kotabe, H. Kurata, K. Tokami, Y. Ikeda, S. Kamohara, and R. Yamada, "Quantitative analysis of random telegraph signals as fluctuations of threshold voltages in scaled Flash memory cells," in Proc. IEEE Int. Rel. Phys. Symp., 2007, pp. 29-35.
7. D instabilities in Flash cells at different initial trap-filling conditions," in Proc. IEEE Int. Rel. Phys. Symp., 2007, pp. 161-166.
8. P. Fantini, A. Ghetti, A. Marinoni, G. Ghidini, A. Visconti, and A. Marmiroli, "Giant random telegraph signals in nanoscale floating-gate devices," IEEE Electron Device Lett., vol. 28, no. 12, pp. 1114-1116, Dec. 2007.
9. C. M. Compagnoni, R. Gusmeroli, A. S. Spinelli, A. L. Lacaita, M. Bonanomi, and A. Visconti, "Statistical model for random telegraph noise in Flash memories," IEEE Trans. Electron Devices, vol. 55, no. 1, pp. 388-395, Jan. 2008.
10. T instability from the stationary trap-filling condition: An analytical spectroscopic investigation," IEEE Trans. Electron Devices, vol. 55, no. 2, pp. 655-661, Feb. 2008.
11. S.-R. Li, W. McMahon, Y.-L. R. Lu, and Y.-H. Lee, "RTS noise characterization in Flash cells," IEEE Electron Device Lett., vol. 29, no. 1, pp. 106-108, Jan. 2008.
12. S.-G. Jung, K.-W. Lee, K.-S. Kim, S.-W. Shin, S.-S. Lee, J.-C. Om, G.-H. Bae, and J.-H. Lee, "Modeling of Vth shift in NAND Flash-memory cell device considering crosstalk and short-channel effects," IEEE Trans. Electron Devices, vol. 55, no. 4, pp. 1020-1026, Apr. 2008.
13. J.-H. Lee, S.-Y. Kim, I. Cho, S. Hwang, and J.-H. Lee, "1/f noise characteristics of sub-100 nm MOS transistors," J. Semicond. Technol. Sci., vol. 6, no. 1, pp. 37-41, Mar. 2006.
14. C. Y. H. Tsai and J. Gong, "1/f noise in the linear region of LDD MOSFETs," IEEE Trans. Electron Devices, vol. 35, no. 12, pp. 2373-2377, Dec. 1988.
15. P. Cappelletti, C. Golla, P. Olivo, and E. Zanoni, Flash Memories, 1st ed. Norwell, MA: Kluwer, 1999, pp. 42-46.
16. M.-H. Tsai and T.-P. Ma, "The impact of device scaling on the current fluctuations in MOSFETs," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2061-2067, Nov. 1994.