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Volumn , Issue , 2007, Pages 161-166

Statistical investigation of random telegraph noise ID instabilities in flash cells at different initial trap-filling conditions

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; FLASH MEMORY; RANDOM PROCESSES; SPECTROSCOPIC ANALYSIS; SPURIOUS SIGNAL NOISE;

EID: 34548726828     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369886     Document Type: Conference Paper
Times cited : (24)

References (6)
  • 5
    • 35949025938 scopus 로고
    • Discrete resistance switching in submicrometer silicon inversion layers: Individual interface traps and low-frequency (1/f?) noise
    • K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, "Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/f?) noise," Phys. Rev. Lett., vol.52, pp. 228-231, 1984.
    • (1984) Phys. Rev. Lett , vol.52 , pp. 228-231
    • Ralls, K.S.1    Skocpol, W.J.2    Jackel, L.D.3    Howard, R.E.4    Fetter, L.A.5    Epworth, R.W.6    Tennant, D.M.7
  • 6
    • 0033740172 scopus 로고    scopus 로고
    • Modeling of SILC based on electron and hole tunneling - Part I: Transient effects
    • June
    • D. Ielmini, A. S. Spinelli, M. A. Rigamonti, and A. L. Lacaita, "Modeling of SILC based on electron and hole tunneling - Part I: Transient effects," IEEE Trans. Electron Devices, vol. 47, pp. 1258-1265, June 2000.
    • (2000) IEEE Trans. Electron Devices , vol.47 , pp. 1258-1265
    • Ielmini, D.1    Spinelli, A.S.2    Rigamonti, M.A.3    Lacaita, A.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.