RTN VT instability from the stationary trap-filling condition: An analytical spectroscopic investigation

IEEE Transactions on Electron Devices

Volumn 55, Issue 2, 2008, Pages 655-661

  Compagnoni, Christian Monzio ^a,b   Gusmeroli, Riccardo ^a,b   Spinelli, Alessandro S ^a,c   Visconti, Angelo ^d  

^a POLITECNICO DI MILANO   (Italy)

^b Italian University Nano Electronics Team IUNET   (Italy)

^c IFN CNR   (Italy)

^d STMICROELECTRONICS   (Italy)

Author keywords

Defects spectroscopy; Random telegraph noise; Semiconductor device modeling

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRAPS; PROBABILITY; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS; TELEGRAPH; THRESHOLD VOLTAGE;

DEFECTS SPECTROSCOPY; STATIONARY TRAP-FILLING CONDITION; TRAP-FILLING CONDITION;

MOS DEVICES;

EID: 39749098854     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.912949     Document Type: Article

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