RTS noise characterization in flash cells

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 106-108

  Li, Sing Rong ^a   McMahon, William ^a   Lu, Yin Lung R ^a   Lee, Yung Huei ^a  

^a INTEL CORPORATION   (United States)

Author keywords

Flash memory; Flicker noise; Nitrogen; Noise spectroscopy; Oxide trap; Random telegraph signal (RTS)

Indexed keywords

FLASH MEMORY; GATES (TRANSISTOR); NITRIDATION; NITROGEN OXIDES; SPURIOUS SIGNAL NOISE;

FLASH CELLS; FLICKER NOISE; NOISE SPECTROSCOPY; OXIDE TRAP; RANDOM TELEGRAPH SIGNAL (RTS);

TELEGRAPH;

EID: 37549031675     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.910776     Document Type: Article

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