Quantitative analysis of random telegraph signals as fluctuations of threshold voltages in scaled flash memory cells

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 29-35

  Miki, H ^a   Osabe, T ^a   Tega, N ^a   Kotabe, A ^a   Kurata, H ^a   Tokami, K ^b   Ikeda, Y ^b   Kamohara, S ^b   Yamada, R ^a  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Flash memories; Oxide breakdown; Percolation; Random telegraph signal; RTS; Vth fluctuation

Indexed keywords

FLASH MEMORY; PARAMETER ESTIMATION; SIGNAL ANALYSIS; STATISTICAL METHODS;

GATE OXIDES; OXIDE BREAKDOWN; QUANTITATIVE ANALYTICAL METHOD; RANDOM TELEGRAPH SIGNAL;

TELEGRAPH;

EID: 34548728066     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369864     Document Type: Conference Paper

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