Isolation of highly doped implants on low-doped active layers for CMOS radiation drift detectors

IEEE Transactions on Electron Devices

Volumn 56, Issue 8, 2009, Pages 1767-1773

  Langfelder, Giacomo ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

CMOS APS; Drift detectors; Implants isolation

Indexed keywords

ACTIVE LAYER; CMOS APS; DOPED SUBSTRATES; DRIFT DETECTORS; ELECTRIC-FIELD; IMPLANTS ISOLATION; PARTICLE DETECTION; PIXEL DETECTOR; PUNCH-THROUGH; SEMI-CONDUCTOR SURFACES; SHALLOW TRENCH ISOLATION; STANDARD CMOS; STANDARD TECHNOLOGY;

ELECTRODES; EPITAXIAL LAYERS; PHASE SHIFTERS; RADIATION DETECTORS;

PIXELS;

EID: 68349137967     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2023019     Document Type: Article

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