The transverse field detector (TFD): A novel color-sensitive CMOS device

IEEE Electron Device Letters

Volumn 29, Issue 12, 2008, Pages 1306-1308

  Longoni, Antonio ^a   Zaraga, Federico ^a   Langfelder, Giacomo ^a   Bombelli, Langfelfer ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

CMOS sensors; Color measurement; Image sensors; Pixel photodetectors

Indexed keywords

COLOR; DETECTORS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRIC GENERATORS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PIXELS; SEMICONDUCTOR MATERIALS; SENSORS;

CMOS COMPATIBILITIES; CMOS DEVICES; CMOS SENSORS; COLOR FILTERS; COLOR MEASUREMENT; COLOR SEPARATIONS; INCIDENT LIGHTS; LIGHT ABSORPTION COEFFICIENTS; PIXEL ARRAYS; SEMI-CONDUCTORS; STANDARD CMOS; TECHNOLOGY SCALING; TEST DEVICES; TRANSVERSE COMPONENTS; TRANSVERSE ELECTRICS; TRANSVERSE FIELDS; WORKING PRINCIPLES;

SEMICONDUCTOR JUNCTIONS;

EID: 57049098079     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2006284     Document Type: Article

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