CMOS monolithic active pixel sensors for minimum ionizing particle tracking using non-epitaxial silicon substrate

IEEE Transactions on Nuclear Science

Volumn 51, Issue 4 I, 2004, Pages 1613-1617

  Dulinski, Wojciech ^a   Berst, Jean Daniel ^a   Besson, Auguste ^b   Claus, Gilles ^a   Colledani, Claude ^a   Deptuch, Grzegorz ^a   Deveaux, Michael ^b,c   Gay, Arnaud ^b   Grandjean, Damien ^b   Gornushkin, Yuri ^b   Himmi, Abdelkader ^b   Hu, Christine ^b   Riester, Jean Louis ^a   Valin, Isabelle ^b   Winter, Marc ^b  

^a Lab Electron/Phys Syst I   (France)

^b INSTITUT DE RECHERCHES SUBATOMIQUES   (France)

^c GST ^*  (Germany)

Author keywords

CMOS; Monolithic; Pixel sensor; Tracking

Indexed keywords

MONOLITHIC; MONOLITHIC ACTIVE PIXEL SENSORS (MAPS); PIXEL SENSORS; TRACKING;

COMPUTER AIDED DESIGN; EPITAXIAL GROWTH; IONIZATION; MICROELECTRONICS; PARTICLE BEAMS; RADIATION HARDENING; SENSORS; SILICON; SUBSTRATES; TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 3342981227     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.832947     Document Type: Conference Paper

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