Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 501, Issue 1, 2003, Pages 251-259

  Turchetta, R ^a   French, M ^a   Manolopoulos, S ^a   Tyndel, M ^a   Allport, P ^b   Bates, R ^c   O'Shea, V ^c   Hall, G ^d   Raymond, M ^d  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

^d IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

CMOS; Imaging; Low noise; Pixel; Solid state detectors

Indexed keywords

CHARGE COUPLED DEVICES; DATA REDUCTION; IMAGE SENSORS; IMAGING TECHNIQUES; PARTICLE DETECTORS; SOLID STATE DEVICES; TRANSISTORS; VLSI CIRCUITS;

FIXED PATTERN NOISE (FPN); MONOLITHIC ACTIVE PIXEL SENSORS (MAPS);

CMOS INTEGRATED CIRCUITS;

EID: 0037459601     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(02)02043-0     Document Type: Conference Paper

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