Electron confinement in drift detectors by means of "channel-stop" implants: characterization at high signal charges

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 2, 1996, Pages 3201-3206

  Castoldi, Andrea ^a  

^a UNIVERSITY OF MILAN   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; ION IMPLANTATION;

DRIFT DETECTORS; ELECTRON CONFINEMENT;

SILICON SENSORS;

EID: 0030349678     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.552718     Document Type: Article

References (6)

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3. J. Kemmer, "Improvement of detector fabrication by the planar process," Nucl. Instrum. Methods, vol. A226, p. 89, 1984.
4. P. Rehak, J. Walton, E. Gatti. A. Longoni, M. Sampietro, J. Kemmer, H. Dietl, P. Holl, R. Klanner, G. Lutz, A. Wylie, and H. Becker, "Progress in semiconductor drift detectors," Nucl. Instrum Methods, vol. A248, pp. 367-378, 1986.
5. G. Baccarani, R. Guerrieri, P. Ciampolini, and M. Rudan, "HFIELDS: A highly flexible 2-D semiconductor-device analysis program," in Proc. Nasecode IV, Dublin, Ireland, June 19-21, 1985, pp. 3-12.
6. E. Gatti, A. Longoni, P. Rehak, and M. Sampietro, "Dynamics of electrons in drift detectors," Nucl. Instrum. Methods, vol. A253, pp. 393-399, 1987.