Design and characterization of a novel, radiation- resistant active pixel sensor in a standard 0.25 μm CMOS technology

IEEE Nuclear Science Symposium Conference Record

Volumn 2, Issue , 2004, Pages 1222-1226

  Villani, Enrico Giulio ^a   Allport, P P ^b   Casse, G ^b   Evans, A ^b   Tyndel, M ^a   Turchetta, R ^a   Velthuis, J J ^b  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; COLLIDING BEAM ACCELERATORS; COMPUTER SIMULATION; HIGH ENERGY PHYSICS; PARTICLE ACCELERATORS; POWER ELECTRONICS; RADIATION DETECTORS; RADIATION EFFECTS; RADIATION HARDENING;

ACTIVE PIXEL SENSORS; CHARGE COLLECTION; RADIATION RESISTANCE; VERTEX DETECTORS;

SENSORS;

EID: 23844557207     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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