Compact modeling of n-side interstrip resistance in p-stop and p-spray isolated double-sided silicon microstrip detectors

IEEE Nuclear Science Symposium and Medical Imaging Conference

Volumn 1, Issue , 2000, Pages

  Verzellesi, G ^a   Dalla Betta, G F ^b   Pignatel, G U ^c  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b ITC IRST   (Italy)

^c UNIVERSITY OF TRENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; MICROSTRIP DEVICES; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

DOUBLE SIDED SILICON MICROSTRIP DETECTORS; INTERSTRIP RESISTANCE;

RADIATION DETECTORS;

EID: 0034593987     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. J. Matheson, et al., "Radiation damage studies of field plate and p-stop n-side silicon microstrip detectors", Nucl. Instrum. and Meth. in Phys. Res., vol. A362, 1995, pp. 297-314.
2. R.H. Richter et al., "Strip detector design for ATLAS and HERA-B using two-dimensional device simulation", Nucl. Instrum. and Meth. in Phys. Res. vol. A377, 1996, pp. 412-421.
3. Y. Tsividis, K. Suyama, and K. Vavelidis, "A simple reconciliation MOSFET model valid in all regions", Electronics Letters, vol. 31, March 1995, pp. 506-508
4. Y. Tsividis, "Operation and modeling of the MOS transistor", 2nd edition, WCB/McGraw-Hill, 1999, p. 178.
5. DESSIS6.0 Reference Manual, ISE Integrated Systems Engineering AG, Zürich (Switzerland).