Evaluation of extreme-ultraviolet lithography mask absorber pattern on multilayer phase defect using extreme-ultraviolet microscope

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 4, 2009, Pages 1938-1942

  Hamamoto, K ^a,b   Sakaya, N ^a,b   Hosoya, M ^a,b   Kureishi, M ^a   Ohkubo, R ^a   Shoki, T ^a,b   Nagarekawa, O ^a   Kishimoto, J ^c   Watanabe, T ^c   Kinoshita, H ^c  

^a HOYA CORPORATION   (Japan)

^b Sanban cho Bldg ^*  (Japan)

^c UNIVERSITY OF HYOGO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER PATTERN; CRITICAL DIMENSION; EUV MICROSCOPE; EXPOSURE TOOL; EXTREME ULTRAVIOLETS; LINE DEFECTS; MULTILAYER BLANKS; MULTILAYER MASK BLANK; PHASE DEFECTS; TEST MASKS;

EXTREME ULTRAVIOLET LITHOGRAPHY; MASKS; MICROSCOPES; MULTILAYERS; ULTRAVIOLET DEVICES;

DEFECTS;

EID: 68349125734     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3179185     Document Type: Article

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