EUV MET printing and actinic imaging analysis on the effects of phase defects on wafer CDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6517, Issue PART 1, 2007, Pages

  Han, Hakseung ^a   Goldberg, Kenneth A ^b   Barty, Anton ^c   Gullikson, Eric M ^b   Ikuta, Yoshiaki ^a   Uno, Toshiyuki ^a   Wood II, Obert R ^d   Wurm, Stefan ^a  

^a SEMATECH   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^d ADVANCED MICRO DEVICES   (United States)

Author keywords

EUV; EUV defect; EUV inspection; EUV masks; Lithography; Printability

Indexed keywords

DEFECTS; IMAGE ANALYSIS; LITHOGRAPHY;

ACTINIC IMAGING MICROSCOPES;

PRINTING;

DEFECTS; IMAGE ANALYSIS; LITHOGRAPHY; PRINTABILITY; PRINTING;

EID: 35148848230     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.711166     Document Type: Conference Paper

References (4)

1. SEMATECH EUV Mask Technology & Standards Workshop, Barcelona/Spain, 19 Oct. 2006. The workshop proceedings can be found at http://www.sematech. org/meetings/archives.htm.
2. P. Kearney et al., Defect Mitigation and Reduction in EUVL Mask Blanks, International Extreme Ultra-Violet Lithography (EUVL) Symposia (2006).
3. E.M. Gullikson et al., Proc. SPIE 5374, 791 (2004).
4. K.A. Goldberg et al., J. Vac. Sci. Technol. B 24, 2824 (2006).