Shape effects on the yield stress and deformation of silicon nanowires: A molecular dynamics simulation

Journal of Applied Physics

Volumn 106, Issue 2, 2009, Pages

  Yang, Zhenyu ^a   Lu, Zixing ^a   Zhao, Ya Pu ^b  

^a BEIHANG UNIVERSITY   (China)

^b INSTITUTE OF MECHANICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE LOADING; CROSS-SECTIONAL SHAPE; DEFORMATION PROCESS; LEAST SQUARE; LOADING DIRECTION; MOLECULAR DYNAMICS SIMULATIONS; SHAPE EFFECT; SILICON DEVICES; SILICON NANOWIRES; SINGLE CRYSTALLINE SILICON; SURFACE-TO-VOLUME RATIO; TENSILE LOADING; TENSION AND COMPRESSION;

ATOMS; DEFORMATION; ELECTRIC WIRE; FAILURE ANALYSIS; MOLECULAR DYNAMICS; MOLECULAR MECHANICS; NANOWIRES; SHEAR STRAIN; TENSILE STRESS;

YIELD STRESS;

EID: 68249155001     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3186619     Document Type: Article

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