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Journal of Applied Physics

Volumn 106, Issue 2, 2009, Pages

Thermal strain-induced dielectric anisotropy in Ba0.7 Sr 0.3 TiO3 thin films grown on silicon-based substrates

(5) Zhu, X H a Guigues, B a,b,c Defay E a Dubarry, C a Aid M a

a CEA GRENOBLE (France)

b ECOLE CENTRALE PARIS (France)

c STMICROELECTRONICS (France)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; ANISOTROPIC DIELECTRICS; BST FILM; DIELECTRIC ANISOTROPIES; DIELECTRIC LAYER; DIELECTRIC PERMITTIVITIES; ELECTRODE CONFIGURATIONS; FILM STRAIN; IN-PLANE; INTER-DIGITAL CAPACITORS; ION-BEAM SPUTTERING; METAL ELECTRODES; METAL INSULATOR METALS; OUT-OF-PLANE DIRECTION; POST DEPOSITION ANNEALING; SILICON-BASED; THERMAL STRAIN; TIO; TUNABILITIES;

ANISOTROPY; BARIUM; CERAMIC CAPACITORS; ELECTROLYTIC CAPACITORS; METAL INSULATOR BOUNDARIES; PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS; SPUTTERING; STRAIN; THIN FILMS;

SUBSTRATES;

EID: 68249153533 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3186019 Document Type: Article

Times cited : (8)

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